gallium nitride powder is a nanocrystalline nitride semiconductor used in many applications. It is widely used in blue light emitting diodes, RF components, lasers, and photonics.
GaN has an energy gap of 3.4 electron volts and is a direct bandgap material, making it ideal for high-power devices. It also has a low cost and is highly insulating.
A new generation of GaN devices is being developed with improved properties that are expected to boost performance. These include increased power density, lower breakdown voltages, and better efficiency at higher temperatures.
The ability to conduct more than 1000 times the amount of electrons that silicon can is believed to be a key factor in GaN’s success as a transistor material. It is also a promising candidate for future THz devices.
Traditionally, gallium nitride has been synthesized in the powder form by a process called direct nitridation. This process involves heating gallium metal with a carrier gas, typically nitrogen or hydrogen, to a temperature in the range of 800 to 1200 deg C. Then, the gallium is nitrided, forming a solid solution with a low nitrate content and a high purity.
To improve GaN powders, a method is proposed that incorporates a second step in the synthesis of the gallium nitride powder. The first step is a nitridation step using a stream of ammonia, such as NH3 or NMNH3, to convert the gallium nitride into a gas-liquid saturate solution. The resulting saturate solution is then added to the gallium metal.
