What is gallium-nitride?
Galium nitrideis an alloy of nitrogen and galium. Its chemical formula is GAN. This compound is a mixture of nitrogen and gallium and has an extremely wide bandgap, high thermal conductivity and resistance to radiation. It also exhibits high strength and hardness. The material can be considered a direct Bandgap semiconductor. It has been used since 1990 in light-emitting devices. This is why gallium (GaN), silica carbide (SiC), aluminium nitride(ALN) as well as gallium oxide (Ga2O3), are known collectively as broad band gap semiconductor material. They are also called the “third generation” semiconductor materials in China.
Gallium nitride development and application prospects
The characteristics of GaN are large band gap widths, high electrical conductivity, low electron saturation drift velocity and high thermal conductivity. They can also be used in power electronics. There are many applications for it, including aerospace and microwave radar as well as satellite communication and 5G. The laser spectrum that its base laser covers is wide. It can be used for missile early detection, satellite secret communication and various other areas. However, the detector has not yet been industrialized.
In chargers, a lot of people use gallium-nitride.
Gallium nitridation is a method of increasing the efficiency of charging and reducing volume. This has been demonstrated by OPPO and Xiaomi who have both started making gallium nitridation packs.
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