Aluminum Nitride (AlN) is an insulating material that provides superior thermal conductivity and electrical insulation properties. It is a common alternative to Beryllium Oxide in the semiconductor industry as it does not contain Beryllium, which is a health hazard when machined into wafers.
AlN is crystalline in the wurtzite structure, and it can be made into thin films by different methods. It has a wide bandgap, and a high thermal conductivity.
It is also known for its piezoelectric characteristics, which make it useful as a piezoelectric (PZ) film used in micro-mechanical motion (MEMS) applications and as an insulating buffer layer for III-V compound semiconductor devices. PZ thin films can be produced using a variety of deposition processes including chemical vapor deposition, spray-drying, and reactive sputtering.
In addition to its piezoelectric properties, AlN has excellent tribological properties that can be exploited in a wide range of machining and grinding applications. It is a strong machinable ceramic material and can be shaped into complex geometries with tight tolerances.
In addition to its excellent tribological properties, AlN is resistant to oxidation at low temperatures and is therefore not prone to bulk oxidation, a process that causes a significant loss of thermal conductivity. Besides, its large electrical insulating properties make it an ideal material for use in a wide range of electronic applications, including power electronics, heat dissipation substrates, and packaging materials.
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