The Current Situation of Conductive Aisotropy within Two-dimensional Limit
Lattice symmetry can influence the thermal conductivity of crystal materials. The conductivity, dielectric constant, Raman number, and other physical quantities are affected by inherent anisotropy. The conductivity of ab in graphite, for example, is three orders larger than that outside in the C direction. This is also true in three-dimensional block van der Waals materials. New phenomena such as anisotropy on various surfaces have been emerging in recent years with the rapid development of two-dimensional material research.
They include the phenomenon of Raman anisotropy, and in-conductivity anisotropy for two-dimensional van der Waals material with low latticesymmetry (e.g., SnSe or GeP). This area has been receiving more research and attention. The prototype devices that are based upon this should be quickly designed and built. However, current anisotropy data in the two-dimensional limit are within 10 which makes them unsuitable for the design and development of new devices. However, it is difficult to know if electrical anisotropy could be controlled using quick and simple means.
Discovery of Two-dimensional Limiting Sublayer Semiconductor Material Galium Telluride
Chinese Academy of Sciences’ Metal Research Institute, Shenyang National research Center for Materials Science. Researchers in collaboration with domestic many found two-dimensional shapes of lower limit semiconductor galium telluride in the plane conductivity of huge anisotropy. These were then implemented using the gate voltage regulation of change of electrical anisotropies of multiple orders of magnitude. Finally, the demonstrator of pertinent prototype devices was completed.
Gallium telluride: Application effects
Vertical assembly of atomic layers within an inert atmosphere allowed the team to contain a few layers (between 4.8 nm & 20 nm) of gallium informuride in two layers of Boron Nitride. Micro- and nano-processing was used to prepare the field effect devices. Electrical measurements were systematically carried out. Experimental results showed that conductivity in a few layers containing holes of gallium Telluride at room temperatures shows an elliptic behavior, with the direction changing. The conductivity anisotropy of these systems is comparable to SnSe or GeP. You can increase the conductivity anisotropy by controlling the gate voltage. It is much higher than the other systems that have in-plane electro anisotropy.
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